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wiki:cmp:transistors:start
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Transistors
Manufacturers
| https://www.panjit.com.tw/en | PANJIT |  China | |
| http://www.unisonic.com.tw/english/index.asp | UTC | China | |
| http://www.sinopowersemi.com/ | Sinopower | China | |
| https://www.21yangjie.com/eng/ | Yangjie | China | https://www.electronshik.ru/brand/YJ |
| https://way-on.com/en_index.html | WAYON | China | https://www.electronshik.ru/brand/WAYON |
MOSFET driver
| link | ext | description | manufacturer | version | date | lang |
|---|---|---|---|---|---|---|
| ADP3121-D.PDF | ADP3121 Onsemi Dual Bootstrapped, 12 V MOSFET Driver with Output Disable | Onsemi | rev.1 | 2010.02 | EN | |
| ADP3110A-D.PDF | ADP3110A Onsemi Dual Bootstrapped, 12 V MOSFET Driver with Output Disable | Onsemi | rev.4 | 2008.08 | EN | |
| ADP3120A-D.PDF | ADP3120A Onsemi Dual Bootstrapped, 12 V MOSFET Driver with Output Disable | Onsemi | rev.5 | 2018.08 | EN |
MOSFET
Question:
Two conditions are described for the total dissipation parameter in the power ratings of a power transistor or a power MOS FET: TA = 25°C and TC = 25°C. What is the difference between these conditions?
Answer:
The specification at TA = 25°C in the power ratings refers to the total power dissipation of a discrete semiconductor element in an environment with an ambient temperature of 25°C.
In this case, the thermal resistance from the heat source to the ambient air is expressed as Rth(j-a).
The specification at TC = 25°C in the power ratings refers to the total power dissipation when the semiconductor element (case) itself has been forcibly cooled, i.e., when temperature of the package surface is kept at 25°C. Note that the ratings may include the note «with infinite heat sink». However, in actual use, it is very difficult to make the package surface temperature exactly 25°C, and if you also take derating into account, the allowable power will in fact be somewhere in between TA = 25°C and TC = 25°C.
MOSFET N-CHANNEL
| link | ext | description | manufacturer | version | date | lang |
|---|---|---|---|---|---|---|
| Infineon_BSC034N03LS_G_DataSheet_v02_00_EN-1731101.pdf | BSC034N03LSG ATMA1 INFINEON Транзистор: N-MOSFET; полевой; 30В; 100А; 57Вт; PG-TDSON-8 | Infineon | rev. 2.0 | 2021.06 | EN | |
| NTMFS4834N-D.PDF | NTMFS4834N Onsemi MOSFET – Power, Single, N-Channel, SO-8FL 30 V, 130 A Применяется с ADP3121 на плате Intel DX58S0 | Onsemi | rev. 6 | 2019.05 | EN |
Для 1.8В
BSS138, FDV301N, WM02N20G (большая ёмкость), WM02N08G (получше, но большая ёмкость)
FDV301N лучше BSS138
FDV303N хороший, ёмкость больше, чем FDV301N
Darlington
wiki/cmp/transistors/start.1667468704.txt.gz · Последнее изменение: 2022/11/03 09:45 — Roman Abakumov
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