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wiki:cmp:mem:lpddr4:start

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LPDDR4 (LPDDR4x)

Manufacturers

https://semiconductor.samsung.com/dram/lpddr/lpddr4x/ Samsung BGA200 up to 32Gb and more
https://product.skhynix.com/products/dram/lpddr/lpddr4x_4.go SKHynix BGA200 up to 32Gb and more
https://www.micron.com/products/dram/lpdram/part-catalog Micron BGA200 up to 24Gb (купил Elpida)
https://www.nanya.com/en/Product/List/547/2356 Nanya BGA200 up to 32Gb
Quimonda Обанкротилась
https://www.issi.com/US/product-dram-lpddr4.shtml ISSI BGA200 up to 8Gb
https://www.alliancememory.com/products/lpddr4-mobile-ddr4/ Alliancememory BGA200 up to 8Gb
https://www.intelligentmemory.com/dram-components/LPDDR4/ Intelligentmemory BGA200 up to 8Gb
https://www.winbond.com/hq/product/mobile-dram/low-power-ddr4-ddr4x-sdram/?__locale=en Winbond BGA200 up to 4Gb
https://www.apmemory.com/products/low-power-dram/ Apmemory 512Mb(x16) under development (Дочка Powerchip)
https://www.cxmt.com/en/products/lpddr4x-dram/ ChangXin Memory Technologies No info

sales.jpg

SKHynix

PC LPDDR4X
H9HCNNNFAMMLXR-NEE 8GB 1.8V / 1.1V / 0.6V 4266Mbps 200Ball MP
H9HCNNNFAMALTR-NME 8GB 1.8V / 1.1V / 0.6V 3733Mbps 200Ball MP
H9HCNNNCPMMLXR-NEE 4GB 1.8V / 1.1V / 0.6V 4266Mbps 200Ball MP
H9HCNNNCPMALHR-NEE 4GB 1.8V / 1.1V / 0.6V 4266Mbps 200Ball MP
H9HCNNNBKMALHR-NEE 2GB 1.8V / 1.1V / 0.6V 4266Mbps 200Ball MP
H9HCNNNBKMMLXR-NEE 2GB 1.8V / 1.1V / 0.6V 4266Mbps 200Ball MP
PC LPDDR4
H9HCNNNCPUMLXR-NEE 4GB 1.8V / 1.1V / 1.1V 4266Mbps 200Ball MP
H9HCNNNBKUMLXR-NEE 2GB 1.8V / 1.1V / 1.1V 4266Mbps 200Ball MP
H9HCNNNBPUMLHR-NME 2GB 1.8V / 1.1V / 1.1V 3733Mbps 200Ball MP
H9HCNNNBPUMLHR-NLE 2GB 1.8V / 1.1V / 1.1V 3200Mbps 200Ball MP
H9HCNNN8KUMLHR-NME 1GB 1.8V / 1.1V / 1.1V 3733Mbps 200Ball MP
H9HCNNN8KUMLHR-NLE 1GB 1.8V / 1.1V / 1.1V 3200Mbps 200Ball MP
Consumer LPDDR4x
H54G66BYYJX104 8GB 1.8V / 1.1V / 0.6V 4266Mbps 200Ball MP
H9HCNNNFAMMLXR-NEI 8GB 1.8V / 1.1V / 0.6V 4266Mbps 200Ball MP
H9HCNNNFAMMLXR-NEE 8GB 1.8V / 1.1V / 0.6V 4266Mbps 200Ball MP
H9HCNNNCPMMLXR-NEE 4GB 1.8V / 1.1V / 0.6V 4266Mbps 200Ball MP
H54G56BYYJX089 4GB 1.8V / 1.1V / 0.6V 4266Mbps 200Ball MP
H9HCNNNCPMMLXR-NEI 4GB 1.8V / 1.1V / 0.6V 4266Mbps 200Ball MP
H9HCNNNCPMMLHR-NMI 4GB 1.8V / 1.1V / 0.6V 3733Mbps 200Ball MP
H9HCNNNCPMMLHR-NME 4GB 1.8V / 1.1V / 0.6V 3733Mbps 200Ball MP
H54G46BYYJX085 2GB 1.8V / 1.1V / 0.6V 4266Mbps 200Ball MP
H9HCNNNBKMMLXR-NEI 2GB 1.8V / 1.1V / 0.6V 4266Mbps 200Ball MP
H9HCNNNBKMMLXR-NEE 2GB 1.8V / 1.1V / 0.6V 4266Mbps 200Ball MP
H9HCNNNBKMMLHR-NME 2GB 1.8V / 1.1V / 0.6V 3733Mbps 200Ball MP
H9HCNNNBKMMLHR-NMI 2GB 1.8V / 1.1V / 0.6V 3733Mbps 200Ball MP
H9HCNNN4KMMLHR-NME 0.5GB 1.8V / 1.1V / 0.6V 3733Mbps 200Ball MP
Consumer LPDDR4
H9HCNNNCPUMLXR-NEE 4GB 1.8V / 1.1V / 1.1V 4266Mbps 200Ball MP
H9HCNNNCPUMLXR-NEI 4GB 1.8V / 1.1V / 1.1V 4266Mbps 200Ball MP
H9HCNNNCPUMLHR-NME 4GB 1.8V / 1.1V / 1.1V 3733Mbps 200Ball MP
H9HCNNNBKUMLXR-NEI 2GB 1.8V / 1.1V / 1.1V 4266Mbps 200Ball MP
H9HCNNNBKUMLXR-NEE 2GB 1.8V / 1.1V / 1.1V 4266Mbps 200Ball MP
H9HCNNNBKUMLHR-NME 2GB 1.8V / 1.1V / 1.1V 3733Mbps 200Ball MP
H9HCNNNBKUMLHR-NMI 2GB 1.8V / 1.1V / 1.1V 3733Mbps 200Ball MP
H9HCNNNBPUMLHR-NME 2GB 1.8V / 1.1V / 1.1V 3733Mbps 200Ball MP
H9HCNNNBPUMLHR-NMI 2GB 1.8V / 1.1V / 1.1V 3733Mbps 200Ball MP
H9HCNNNBPUMLHR-NLE 2GB 1.8V / 1.1V / 1.1V 3200Mbps 200Ball MP
H54G36AYRBX257 1GB 1.8V / 1.1V / 0.6V 4266Mbps 200Ball CS
H54G36AYRJX246 1GB 1.8V / 1.1V / 0.6V 4266Mbps 200Ball CS
H54G38AYRBX259 1GB 1.8V / 1.1V / 0.6V 4266Mbps 200Ball CS
H9HCNNN8KUMLHR-NME 1GB 1.8V / 1.1V / 1.1V 3733Mbps 200Ball MP
H9HCNNN8KUMLHR-NMI 1GB 1.8V / 1.1V / 1.1V 3733Mbps 200Ball MP
H54G26AYRBX256 0.5GB 1.8V / 1.1V / 0.6V 4266Mbps 200Ball CS
H9HCNNN4KUMLHR-NMI 0.5GB 1.8V / 1.1V / 1.1V 3733Mbps 200Ball MP
H9HCNNN4KUMLHR-NME 0.5GB 1.8V / 1.1V / 1.1V 3733Mbps 200Ball MP
Automotive LPDDR4x
H54G66BYYVX104 8GB 1.8V / 1.1V / 0.6V 4266Mbps 200Ball MP
H54G66BYYPX104 8GB 1.8V / 1.1V / 0.6V 4266Mbps 200Ball MP
H54G66BYYQX104 8GB 1.8V / 1.1V / 0.6V 4266Mbps 200Ball MP
H54G56BYYPX089 4GB 1.8V / 1.1V / 0.6V 4266Mbps 200Ball MP
H54G56BYYVX089 4GB 1.8V / 1.1V / 0.6V 4266Mbps 200Ball MP
H9HCNNNCPMMLHR-NMO 4GB 1.8V / 1.1V / 0.6V 3733Mbps 200Ball MP
H9HCNNNCPMMLHR-NMN 4GB 1.8V / 1.1V / 0.6V 3733Mbps 200Ball MP
H54G46BYYQX085 2GB 1.8V / 1.1V / 0.6V 4266Mbps 200Ball MP
H54G46BYYVX085 2GB 1.8V / 1.1V / 0.6V 4266Mbps 200Ball MP
H54G46BYYPX085 2GB 1.8V / 1.1V / 0.6V 4266Mbps 200Ball MP
H9HCNNNBKMMLHR-NMO 2GB 1.8V / 1.1V / 0.6V 3733Mbps 200Ball MP
H9HCNNNBKMMLHR-NMN 2GB 1.8V / 1.1V / 0.6V 3733Mbps 200Ball MP
H54G38AYRPX264 1GB 1.8V / 1.1V / 0.6V 4266Mbps 200Ball MP
H54G36AYRPX246 1GB 1.8V / 1.1V / 0.6V 4266Mbps 200Ball MP
H54G36AYRQX246 1GB 1.8V / 1.1V / 0.6V 4266Mbps 200Ball MP
H54G38AYRVX264 1GB 1.8V / 1.1V / 0.6V 4266Mbps 200Ball MP
H54G36AYRVX246 1GB 1.8V / 1.1V / 0.6V 4266Mbps 200Ball MP
H54G38AYRQX264 1GB 1.8V / 1.1V / 0.6V 4266Mbps 200Ball MP
H54G26AYRPX066 0.5GB 1.8V / 1.1V / 0.6V 4266Mbps 200Ball MP
H54G26AYRVX066 0.5GB 1.8V / 1.1V / 0.6V 4266Mbps 200Ball MP
H54G26AYRQX066 0.5GB 1.8V / 1.1V / 0.6V 4266Mbps 200Ball MP
H9HCNNN4KMMLHR-NMP 0.5GB 1.8V / 1.1V / 0.6V 3733Mbps 200Ball MP
H9HCNNN4KMMLHR-NMO 0.5GB 1.8V / 1.1V / 0.6V 3733Mbps 200Ball MP
H9HCNNN4KMMLHR-NMN 0.5GB 1.8V / 1.1V / 0.6V 3733Mbps 200Ball MP
Automotive LPDDR4
H54G56BYYQX046 4GB 1.8V / 1.1V / 1.1V 4266Mbps 200Ball MP
H54G56BYYVX046 4GB 1.8V / 1.1V / 1.1V 4266Mbps 200Ball MP
H54G56BYYPX046 4GB 1.8V / 1.1V / 1.1V 4266Mbps 200Ball MP
H9HCNNNCPUMLHR-NMN 4GB 1.8V / 1.1V / 1.1V 3733Mbps 200Ball MP
H9HCNNNCPUMLHR-NMO 4GB 1.8V / 1.1V / 1.1V 3733Mbps 200Ball MP
H54G46BYYVX053 2GB 1.8V / 1.1V / 1.1V 4266Mbps 200Ball MP
H54G46BYYPX053 2GB 1.8V / 1.1V / 1.1V 4266Mbps 200Ball MP
H54G46BYYQX053 2GB 1.8V / 1.1V / 1.1V 4266Mbps 200Ball MP
H9HCNNNBPUMLHR-NMO 2GB 1.8V / 1.1V / 1.1V 3733Mbps 200Ball MP
H9HCNNNBPUMLHR-NMN 2GB 1.8V / 1.1V / 1.1V 3733Mbps 200Ball MP
H9HCNNNBKUMLHR-NMO 2GB 1.8V / 1.1V / 1.1V 3733Mbps 200Ball MP
H9HCNNNBKUMLHR-NMN 2GB 1.8V / 1.1V / 1.1V 3733Mbps 200Ball MP
H9HCNNN8KUMLHR-NMN 1GB 1.8V / 1.1V / 1.1V 3733Mbps 200Ball MP
H9HCNNN8KUMLHR-NMO 1GB 1.8V / 1.1V / 1.1V 3733Mbps 200Ball MP
H9HCNNN4KUMLHR-NMO 0.5GB 1.8V / 1.1V / 1.1V 3733Mbps 200Ball MP
H9HCNNN4KUMLHR-NMP 0.5GB 1.8V / 1.1V / 1.1V 3733Mbps 200Ball MP
H9HCNNN4KUMLHR-NMN 0.5GB 1.8V / 1.1V / 1.1V 3733Mbps 200Ball MP

low power

LPDDR4X is a variant of LPDDR4, with the difference of additional power savings by reducing the I/O voltage from 1.1 V to 0.6 V.

ECC

ECC is supported on the LPDDR4 interface. Unlike traditional ECC interfaces which require dedicated memory pins and devices, ECC is supported inline. The ECC system impact is in interface bandwidth and overall memory density, as ECC data is stored alongside non-ECC data.

  • sideband - это когда отдельный чип под ECC (для LPDDR - не бывает)
  • inline - когда из разных мест читает контроллер
  • on-die - когда всё в пямяти и дополнительно для ECC место выделено

Termination

LPDDR4 memories have software configurable on-die termination for both the data group nets. The DDR subsystem also contains software configurable on-die termination for the address/control group nets. Thus, termination is not required on any DDR signals for an LPDDR4 configuration.

VREF

LPDDR4 memories generate their own VREFCA and VREFDQ internally for the address / command bus and data bus, respectively. Similarly, the DDR PHY also provides its own reference voltage for the data group nets during reads. Thus unlike DDR3 and DDR4, VREF does not need to be generated on the board, and there is no required VREF routing for an LPDDR4 configuration.

VTT

Unlike DDR3 and DDR4, there is no required termination on the PCB of the address/control bus of an LPDDR4 configuration. All termination is handled internally (on-die). Thus, VTT does not apply for LPDDR4.

Routing

TI RockChip ref design
SE impedance 40 Ohm 4mil\0.035u\0.082 prepreg Dk4.5 - ??? Ohm
DIFF impedance 80 Ohm 3.8mil\6mil\0.035u\0.082 prepreg Dk4.5 - ??? Ohm

Balanced T traces (also referred to as T-branch traces) are split traces from source to multiple end points. The target impedance of the split trace should be 2 times the non-branched impedance.

The length/delay matching process should include a mechanism for compensating for the velocity delta between these two types of PCB interconnects. A compensation factor of 1.1 has been specified for this purpose by JEDEC. All microstrip segment lengths are to be divided by 1.1 before summation into the length matching equation. The resulting compensated length is termed the 'stripline equivalent length'.

CK and ADDR_CTRL TI
CK+ to CK- skew 0.25 ps TYP
inside ADDR_CTRL skew 3 ps TYP
CK to ADDR_CTRL skew 3 ps TYP
CK\ADDR_CTRL propagation delay 250 ps MAX
DATA TI
DQS+ to DQS- skew 0.1 ps TYP
inside DQSx + BYTEx skew 0.5 ps TYP
BYTEx\DQSx propagation delay 250 ps MAX
Propagation delay of each DQS pair must be less than propagation delay DQ/DM
Propagation delay of each DQS pair must be less than propagation delay of CK pair.

Docs

Application Notes
link ext description manufacturer version date lang
8MN HDG LPDDR4 related excerpts.pdf pdf i.MX 8M Nano LPDDR4-3200 design recommendations
NXP
NXP EN
spracn9b.pdf pdf SPRACN9B Application Report
Jacinto 7 LPDDR4 Board Design and Layout Guidelines
Texas Instruments Rev. B 2021 EN
spraar7h.pdf pdf Application Report
SPRAAR7H–August 2014–Revised Ocrtober 2018
High-Speed Interface Layout Guidelines
Texas Instruments Rev. H 2018 EN
Datasheets
link ext description manufacturer version date lang
200b_z11m_non_auto_lpddr4_lpddr4x.pdf pdf MT53D512M16D1, MT53D512M32D2, MT53D1024M32D4
200b: x16/x32 LPDDR4/LPDDR4X SDRAM
1GB, 2GB, 4GB
Micron Rev. D 3/20 2017 EN
wiki/cmp/mem/lpddr4/start.1666797105.txt.gz · Последнее изменение: 2022/10/26 15:11 — Roman Abakumov