Показаны различия между двумя версиями страницы.
| Предыдущая версия справа и слеваПредыдущая версияСледующая версия | Предыдущая версия | ||
| wiki:cmp:transistors:start [2022/11/03 09:45] – Roman Abakumov | wiki:cmp:transistors:start [2023/12/18 10:49] (текущий) – Roman Abakumov | ||
|---|---|---|---|
| Строка 1: | Строка 1: | ||
| ====== Transistors ====== | ====== Transistors ====== | ||
| - | |||
| ===== Manufacturers ===== | ===== Manufacturers ===== | ||
| - | | https:// | + | | https:// |
| - | | http:// | + | | http:// |
| - | | http:// | + | | http:// |
| - | | https:// | + | | https:// |
| - | | https:// | + | | https:// |
| + | | http:// | ||
| + | | http:// | ||
| ===== MOSFET driver ===== | ===== MOSFET driver ===== | ||
| Строка 13: | Строка 15: | ||
| | [[http:// | | [[http:// | ||
| | [[http:// | | [[http:// | ||
| + | |||
| ===== MOSFET ===== | ===== MOSFET ===== | ||
| **Question: | **Question: | ||
| - | Two conditions are described for the total dissipation parameter in the power ratings of a power transistor or a power MOS FET: TA = 25°C and TC = 25°C. What is the difference between these conditions? | + | Two conditions are described for the total dissipation parameter in the power ratings of a power transistor or a power MOS FET: **Ta** |
| **Answer: | **Answer: | ||
| - | The specification at TA = 25°C in the power ratings refers to the total power dissipation of a discrete semiconductor element in an environment with an ambient temperature of 25°C. | + | The specification at **Ta** |
| - | In this case, the thermal resistance from the heat source to the ambient air is expressed as Rth(j-a). | + | In this case, the thermal resistance from the heat source to the ambient air is expressed as **Rth(j-a)**. |
| + | |||
| + | The specification at **Tc** = 25°C in the power ratings refers to the total power dissipation when the semiconductor element (case) itself has been forcibly cooled, i.e., when temperature of the package surface is kept at 25°C. | ||
| + | Note that the ratings may include the note "with infinite heat sink". However, in actual use, it is very difficult to make the package surface temperature exactly 25°C, and if you also take derating into account, the allowable power will in fact be somewhere in between **Ta** = 25°C and **Tc** = 25°C. | ||
| + | |||
| + | **Ta** = Ambient temperature. This is a still air temperature reading for the environment that the semiconductor is in. | ||
| + | |||
| + | **Tc** = Case temperature. This is the temperature reading of the case of the semiconductor device. | ||
| + | |||
| + | >**Ta** would normally mean the environment is cooled and kept at 25°C whereas Tc would mean the device is forcibly cooled through a directly attached heatsink and cooled to the 25°C. | ||
| + | |||
| + | **Tj** = Operating Junction temperature. This is the temperature of the device circuit itself under given conditions. **Tj** must be calculated from the **Tc** and/or **Ta**. | ||
| + | |||
| + | **TJmax** = Maximum Junction temperature. This is the maximum temperature that the device tolerate. | ||
| - | The specification at TC = 25°C in the power ratings refers to the total power dissipation when the semiconductor element (case) itself has been forcibly cooled, i.e., when temperature of the package surface is kept at 25°C. | ||
| - | Note that the ratings may include the note "with infinite heat sink". However, in actual use, it is very difficult to make the package surface temperature exactly 25°C, and if you also take derating into account, the allowable power will in fact be somewhere in between TA = 25°C and TC = 25°C. | ||
| ==== MOSFET N-CHANNEL ==== | ==== MOSFET N-CHANNEL ==== | ||
| Строка 30: | Строка 44: | ||
| | [[http:// | | [[http:// | ||
| - | === Для 1.8В === | ||
| + | === Для 1.8В === | ||
| BSS138, FDV301N, WM02N20G (большая ёмкость), | BSS138, FDV301N, WM02N20G (большая ёмкость), | ||