Показаны различия между двумя версиями страницы.
Предыдущая версия справа и слеваПредыдущая версияСледующая версия | Предыдущая версия | ||
wiki:cmp:transistors:start [2022/11/03 09:45] – Roman Abakumov | wiki:cmp:transistors:start [2023/12/18 10:49] (текущий) – Roman Abakumov | ||
---|---|---|---|
Строка 1: | Строка 1: | ||
====== Transistors ====== | ====== Transistors ====== | ||
- | |||
===== Manufacturers ===== | ===== Manufacturers ===== | ||
- | | https:// | + | | https:// |
- | | http:// | + | | http:// |
- | | http:// | + | | http:// |
- | | https:// | + | | https:// |
- | | https:// | + | | https:// |
+ | | http:// | ||
+ | | http:// | ||
===== MOSFET driver ===== | ===== MOSFET driver ===== | ||
Строка 13: | Строка 15: | ||
| [[http:// | | [[http:// | ||
| [[http:// | | [[http:// | ||
+ | |||
===== MOSFET ===== | ===== MOSFET ===== | ||
**Question: | **Question: | ||
- | Two conditions are described for the total dissipation parameter in the power ratings of a power transistor or a power MOS FET: TA = 25°C and TC = 25°C. What is the difference between these conditions? | + | Two conditions are described for the total dissipation parameter in the power ratings of a power transistor or a power MOS FET: **Ta** |
**Answer: | **Answer: | ||
- | The specification at TA = 25°C in the power ratings refers to the total power dissipation of a discrete semiconductor element in an environment with an ambient temperature of 25°C. | + | The specification at **Ta** |
- | In this case, the thermal resistance from the heat source to the ambient air is expressed as Rth(j-a). | + | In this case, the thermal resistance from the heat source to the ambient air is expressed as **Rth(j-a)**. |
+ | |||
+ | The specification at **Tc** = 25°C in the power ratings refers to the total power dissipation when the semiconductor element (case) itself has been forcibly cooled, i.e., when temperature of the package surface is kept at 25°C. | ||
+ | Note that the ratings may include the note "with infinite heat sink". However, in actual use, it is very difficult to make the package surface temperature exactly 25°C, and if you also take derating into account, the allowable power will in fact be somewhere in between **Ta** = 25°C and **Tc** = 25°C. | ||
+ | |||
+ | **Ta** = Ambient temperature. This is a still air temperature reading for the environment that the semiconductor is in. | ||
+ | |||
+ | **Tc** = Case temperature. This is the temperature reading of the case of the semiconductor device. | ||
+ | |||
+ | >**Ta** would normally mean the environment is cooled and kept at 25°C whereas Tc would mean the device is forcibly cooled through a directly attached heatsink and cooled to the 25°C. | ||
+ | |||
+ | **Tj** = Operating Junction temperature. This is the temperature of the device circuit itself under given conditions. **Tj** must be calculated from the **Tc** and/or **Ta**. | ||
+ | |||
+ | **TJmax** = Maximum Junction temperature. This is the maximum temperature that the device tolerate. | ||
- | The specification at TC = 25°C in the power ratings refers to the total power dissipation when the semiconductor element (case) itself has been forcibly cooled, i.e., when temperature of the package surface is kept at 25°C. | ||
- | Note that the ratings may include the note "with infinite heat sink". However, in actual use, it is very difficult to make the package surface temperature exactly 25°C, and if you also take derating into account, the allowable power will in fact be somewhere in between TA = 25°C and TC = 25°C. | ||
==== MOSFET N-CHANNEL ==== | ==== MOSFET N-CHANNEL ==== | ||
Строка 30: | Строка 44: | ||
| [[http:// | | [[http:// | ||
- | === Для 1.8В === | ||
+ | === Для 1.8В === | ||
BSS138, FDV301N, WM02N20G (большая ёмкость), | BSS138, FDV301N, WM02N20G (большая ёмкость), | ||