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wiki:cmp:transistors:start [2022/11/03 09:45] Roman Abakumovwiki:cmp:transistors:start [2023/12/18 10:49] (текущий) Roman Abakumov
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 ====== Transistors ====== ====== Transistors ======
- 
 ===== Manufacturers ===== ===== Manufacturers =====
-| https://www.panjit.com.tw/en | PANJIT | {{flag>cn}} China | | +| https://www.panjit.com.tw/en                 | PANJIT    | {{flag>cn}} China | | 
-| http://www.unisonic.com.tw/english/index.asp | UTC | {{flag>cn}} China | | +| http://www.unisonic.com.tw/english/index.asp | UTC       | {{flag>cn}} China | | 
-| http://www.sinopowersemi.com/ | Sinopower | {{flag>cn}} China | | +| http://www.sinopowersemi.com/                | Sinopower | {{flag>cn}} China | | 
-| https://www.21yangjie.com/eng/ | Yangjie | {{flag>cn}} China | https://www.electronshik.ru/brand/YJ | +| https://www.21yangjie.com/eng/               | Yangjie   | {{flag>cn}} China | https://www.electronshik.ru/brand/YJ | 
-| https://way-on.com/en_index.html | WAYON | {{flag>cn}} China | https://www.electronshik.ru/brand/WAYON |+| https://way-on.com/en_index.html             | WAYON     | {{flag>cn}} China | https://www.electronshik.ru/brand/WAYON | 
 +| http://www.goford.cn/products.php?CateId=3   | Goford    | {{flag>cn}} China | | 
 +| http://www.vbsemi.com/                       | VBSemi    |                   | | 
  
 ===== MOSFET driver ===== ===== MOSFET driver =====
Строка 13: Строка 15:
 | [[http://doc.inmys.ru/open?hash=8ab793417f5de9a848913eac7433aa10|ADP3110A-D.PDF]] | PDF | **ADP3110A**\\ Onsemi\\ Dual Bootstrapped, 12 V MOSFET Driver with Output Disable  | Onsemi | rev.4 | 2008.08 | EN | | [[http://doc.inmys.ru/open?hash=8ab793417f5de9a848913eac7433aa10|ADP3110A-D.PDF]] | PDF | **ADP3110A**\\ Onsemi\\ Dual Bootstrapped, 12 V MOSFET Driver with Output Disable  | Onsemi | rev.4 | 2008.08 | EN |
 | [[http://doc.inmys.ru/open?hash=118b9c92f47e45506c8de1ab5dfaf739|ADP3120A-D.PDF]] | PDF | **ADP3120A**\\ Onsemi\\ Dual Bootstrapped, 12 V MOSFET Driver with Output Disable  | Onsemi | rev.5 | 2018.08 | EN | | [[http://doc.inmys.ru/open?hash=118b9c92f47e45506c8de1ab5dfaf739|ADP3120A-D.PDF]] | PDF | **ADP3120A**\\ Onsemi\\ Dual Bootstrapped, 12 V MOSFET Driver with Output Disable  | Onsemi | rev.5 | 2018.08 | EN |
 +
  
 ===== MOSFET ===== ===== MOSFET =====
 **Question:**\\ **Question:**\\
-Two conditions are described for the total dissipation parameter in the power ratings of a power transistor or a power MOS FET: TA = 25°C and TC = 25°C. What is the difference between these conditions?+Two conditions are described for the total dissipation parameter in the power ratings of a power transistor or a power MOS FET: **Ta** = 25°C and **Tc** = 25°C. What is the difference between these conditions?
  
 **Answer:**\\ **Answer:**\\
-The specification at TA = 25°C in the power ratings refers to the total power dissipation of a discrete semiconductor element in an environment with an ambient temperature of 25°C. +The specification at **Ta** = 25°C in the power ratings refers to the total power dissipation of a discrete semiconductor element in an environment with an ambient temperature of 25°C. 
-In this case, the thermal resistance from the heat source to the ambient air is expressed as Rth(j-a).+In this case, the thermal resistance from the heat source to the ambient air is expressed as **Rth(j-a)**. 
 + 
 +The specification at **Tc** = 25°C in the power ratings refers to the total power dissipation when the semiconductor element (case) itself has been forcibly cooled, i.e., when temperature of the package surface is kept at 25°C. 
 +Note that the ratings may include the note "with infinite heat sink". However, in actual use, it is very difficult to make the package surface temperature exactly 25°C, and if you also take derating into account, the allowable power will in fact be somewhere in between **Ta** = 25°C and **Tc** = 25°C. 
 + 
 +**Ta** = Ambient temperature. This is a still air temperature reading for the environment that the semiconductor is in. 
 + 
 +**Tc** = Case temperature. This is the temperature reading of the case of the semiconductor device. 
 + 
 +>**Ta** would normally mean the environment is cooled and kept at 25°C whereas Tc would mean the device is forcibly cooled through a directly attached heatsink and cooled to the 25°C. 
 + 
 +**Tj** = Operating Junction temperature. This is the temperature of the device circuit itself under given conditions. **Tj** must be calculated from the **Tc** and/or **Ta**. 
 + 
 +**TJmax** = Maximum Junction temperature. This is the maximum temperature that the device tolerate.
  
-The specification at TC = 25°C in the power ratings refers to the total power dissipation when the semiconductor element (case) itself has been forcibly cooled, i.e., when temperature of the package surface is kept at 25°C. 
-Note that the ratings may include the note "with infinite heat sink". However, in actual use, it is very difficult to make the package surface temperature exactly 25°C, and if you also take derating into account, the allowable power will in fact be somewhere in between TA = 25°C and TC = 25°C. 
  
 ==== MOSFET N-CHANNEL ==== ==== MOSFET N-CHANNEL ====
Строка 30: Строка 44:
 | [[http://doc.inmys.ru/open?hash=1eab888b3a2d77d344c2123a6d4e7d78|NTMFS4834N-D.PDF]] | PDF | **NTMFS4834N**\\ Onsemi\\ MOSFET – Power, Single, N-Channel, SO-8FL 30 V, 130 A\\ Применяется с ADP3121 на плате Intel DX58S0 | Onsemi | rev. 6 | 2019.05 | EN | | [[http://doc.inmys.ru/open?hash=1eab888b3a2d77d344c2123a6d4e7d78|NTMFS4834N-D.PDF]] | PDF | **NTMFS4834N**\\ Onsemi\\ MOSFET – Power, Single, N-Channel, SO-8FL 30 V, 130 A\\ Применяется с ADP3121 на плате Intel DX58S0 | Onsemi | rev. 6 | 2019.05 | EN |
  
-=== Для 1.8В === 
  
 +=== Для 1.8В ===
 BSS138, FDV301N, WM02N20G (большая ёмкость), WM02N08G (получше, но большая ёмкость) BSS138, FDV301N, WM02N20G (большая ёмкость), WM02N08G (получше, но большая ёмкость)
  
wiki/cmp/transistors/start.1667468704.txt.gz · Последнее изменение: 2022/11/03 09:45 — Roman Abakumov