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| Следующая версия | Предыдущая версия | ||
| wiki:power:dcdc:start [2022/10/20 16:09] – создано Roman Abakumov | wiki:power:dcdc:start [2024/07/31 11:49] (текущий) – Roman Abakumov | ||
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| Строка 1: | Строка 1: | ||
| ====== DCDC ====== | ====== DCDC ====== | ||
| + | ===== Load Line ===== | ||
| + | {{: | ||
| + | |||
| + | | https:// | ||
| + | | https:// | ||
| + | |||
| ===== Snubber ===== | ===== Snubber ===== | ||
| Строка 5: | Строка 11: | ||
| <WRAP center round tip 60%> | <WRAP center round tip 60%> | ||
| - | Резистор может прилично греться | + | * Резистор может прилично греться |
| + | * Надо подбирать экспериментально | ||
| </ | </ | ||
| Строка 23: | Строка 30: | ||
| Пример после настройки Snubber:\\ | Пример после настройки Snubber:\\ | ||
| {{ : | {{ : | ||
| + | |||
| + | ===== MOSFET Self-Turn-On Phenomenon ===== | ||
| + | Эффект произвольного включения верхнего транзистора. | ||
| + | |||
| + | Про эффект: | ||
| + | * [[https:// | ||
| + | |||
| + | **Из app note toshiba: | ||
| + | Selecting MOSFETs with a **high Vth** and a **low Cgd** is of primary importance. | ||
| + | |||
| + | **Из даташита ISL6625A: | ||
| + | Should the driver have insufficient bias voltage applied, its | ||
| + | outputs are floating. If the input bus is energized at a high dV/dt | ||
| + | rate while the driver outputs are floating, due to self-coupling via | ||
| + | the internal CGD of the MOSFET, the gate of the upper MOSFET | ||
| + | could momentarily rise up to a level greater than the threshold | ||
| + | voltage of the device, potentially turning on the upper switch. | ||
| + | Therefore, if such a situation could conceivably be encountered, | ||
| + | it is a common practice to place a resistor (RUGPH) across the | ||
| + | gate and source of the upper MOSFET to suppress the Miller | ||
| + | coupling effect. The value of the resistor depends mainly on the | ||
| + | input voltage’s rate of rise, the CGD/CGS ratio, as well as the | ||
| + | gate-source threshold of the upper MOSFET. A higher dV/dt, a | ||
| + | lower CDS/CGS ratio, and a lower gate-source threshold upper | ||
| + | FET will require a smaller resistor to diminish the effect of the | ||
| + | internal capacitive coupling. For most applications, | ||
| + | integrated 20kΩ resistor is sufficient, not affecting normal | ||
| + | performance and efficiency. | ||
| + | |||
| + | {{: | ||
| + | |||
| + | The coupling effect can be roughly estimated with Equation 5, | ||
| + | which assumes a fixed linear input ramp and neglects the | ||
| + | clamping effect of the body diode of the upper drive and the | ||
| + | bootstrap capacitor. Other parasitic components such as lead | ||
| + | inductances and PCB capacitances are also not taken into | ||
| + | account. Figure 6 provides a visual reference for this | ||
| + | phenomenon and its potential solution. | ||
| + | |||
| + | {{: | ||
| + | |||
| + | ===== NTC temp measurement and treshold ===== | ||
| + | На примере ISL95866. | ||
| + | |||
| + | Кусок схемы: | ||
| + | {{: | ||
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| + | Характеристика термистора [[|NCP18WM474E03RB]] (2-я кривая): | ||
| + | {{: | ||
| + | |||
| + | Внутри контроллера: | ||
| + | {{: | ||
| + | |||
| + | Пороги контроллера: | ||
| + | {{: | ||
| + | |||
| + | R|| = 1/(1/18k + 1/Rntc) | ||
| + | |||
| + | U = 10uA * (13k3 + R||) | ||
| + | |||
| + | ^ Температура ^ Сопротивление термистора ^ Напряжение на входе при токе 10uA ^ | ||
| + | | 25 град | ||
| + | | 75 град | ||
| + | | 90 град | ||
| + | |||
| + | Видно, что при 90 град. защита ещё не сработает. | ||
| + | |||
| + | Если необходимо, | ||
| + | ^ Температура ^ Сопротивление термистора ^ Напряжение на входе при токе 10uA ^ | ||
| + | | 25 град | ||
| + | | 75 град | ||
| + | | 90 град | ||
| + | |||
| + | Т.е. при достижении 90 град. будет вырабатываться сигнал VR_HOT. При остывании до 75 град. VR_HOT будет сбрасываться. | ||
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| + | <WRAP center round important 60%> | ||
| + | Надо всё это проверить. | ||
| + | </ | ||
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