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wiki:power:dcdc:start [2022/10/20 16:09] – создано Roman Abakumov | wiki:power:dcdc:start [2024/07/31 11:49] (текущий) – Roman Abakumov | ||
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====== DCDC ====== | ====== DCDC ====== | ||
+ | ===== Load Line ===== | ||
+ | {{: | ||
+ | |||
+ | | https:// | ||
+ | | https:// | ||
+ | |||
===== Snubber ===== | ===== Snubber ===== | ||
Строка 5: | Строка 11: | ||
<WRAP center round tip 60%> | <WRAP center round tip 60%> | ||
- | Резистор может прилично греться | + | * Резистор может прилично греться |
+ | * Надо подбирать экспериментально | ||
</ | </ | ||
Строка 23: | Строка 30: | ||
Пример после настройки Snubber:\\ | Пример после настройки Snubber:\\ | ||
{{ : | {{ : | ||
+ | |||
+ | ===== MOSFET Self-Turn-On Phenomenon ===== | ||
+ | Эффект произвольного включения верхнего транзистора. | ||
+ | |||
+ | Про эффект: | ||
+ | * [[https:// | ||
+ | |||
+ | **Из app note toshiba: | ||
+ | Selecting MOSFETs with a **high Vth** and a **low Cgd** is of primary importance. | ||
+ | |||
+ | **Из даташита ISL6625A: | ||
+ | Should the driver have insufficient bias voltage applied, its | ||
+ | outputs are floating. If the input bus is energized at a high dV/dt | ||
+ | rate while the driver outputs are floating, due to self-coupling via | ||
+ | the internal CGD of the MOSFET, the gate of the upper MOSFET | ||
+ | could momentarily rise up to a level greater than the threshold | ||
+ | voltage of the device, potentially turning on the upper switch. | ||
+ | Therefore, if such a situation could conceivably be encountered, | ||
+ | it is a common practice to place a resistor (RUGPH) across the | ||
+ | gate and source of the upper MOSFET to suppress the Miller | ||
+ | coupling effect. The value of the resistor depends mainly on the | ||
+ | input voltage’s rate of rise, the CGD/CGS ratio, as well as the | ||
+ | gate-source threshold of the upper MOSFET. A higher dV/dt, a | ||
+ | lower CDS/CGS ratio, and a lower gate-source threshold upper | ||
+ | FET will require a smaller resistor to diminish the effect of the | ||
+ | internal capacitive coupling. For most applications, | ||
+ | integrated 20kΩ resistor is sufficient, not affecting normal | ||
+ | performance and efficiency. | ||
+ | |||
+ | {{: | ||
+ | |||
+ | The coupling effect can be roughly estimated with Equation 5, | ||
+ | which assumes a fixed linear input ramp and neglects the | ||
+ | clamping effect of the body diode of the upper drive and the | ||
+ | bootstrap capacitor. Other parasitic components such as lead | ||
+ | inductances and PCB capacitances are also not taken into | ||
+ | account. Figure 6 provides a visual reference for this | ||
+ | phenomenon and its potential solution. | ||
+ | |||
+ | {{: | ||
+ | |||
+ | ===== NTC temp measurement and treshold ===== | ||
+ | На примере ISL95866. | ||
+ | |||
+ | Кусок схемы: | ||
+ | {{: | ||
+ | |||
+ | |||
+ | Характеристика термистора [[|NCP18WM474E03RB]] (2-я кривая): | ||
+ | {{: | ||
+ | |||
+ | Внутри контроллера: | ||
+ | {{: | ||
+ | |||
+ | Пороги контроллера: | ||
+ | {{: | ||
+ | |||
+ | R|| = 1/(1/18k + 1/Rntc) | ||
+ | |||
+ | U = 10uA * (13k3 + R||) | ||
+ | |||
+ | ^ Температура ^ Сопротивление термистора ^ Напряжение на входе при токе 10uA ^ | ||
+ | | 25 град | ||
+ | | 75 град | ||
+ | | 90 град | ||
+ | |||
+ | Видно, что при 90 град. защита ещё не сработает. | ||
+ | |||
+ | Если необходимо, | ||
+ | ^ Температура ^ Сопротивление термистора ^ Напряжение на входе при токе 10uA ^ | ||
+ | | 25 град | ||
+ | | 75 град | ||
+ | | 90 град | ||
+ | |||
+ | Т.е. при достижении 90 град. будет вырабатываться сигнал VR_HOT. При остывании до 75 град. VR_HOT будет сбрасываться. | ||
+ | |||
+ | <WRAP center round important 60%> | ||
+ | Надо всё это проверить. | ||
+ | </ | ||
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