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--- wiki:cmp:transistors:start [2022/04/19 08:55] – создано Roman Abakumov
+++ wiki:cmp:transistors:start [2023/12/18 10:49] (текущий) – Roman Abakumov
@@ Строка 1: / Строка 1: @@
-===== Transistors =====
+====== Transistors ======
+===== Manufacturers =====
+| https://www.panjit.com.tw/en                 | PANJIT    | {{flag>cn}} China | |
+| http://www.unisonic.com.tw/english/index.asp | UTC       | {{flag>cn}} China | |
+| http://www.sinopowersemi.com/                | Sinopower | {{flag>cn}} China | |
+| https://www.21yangjie.com/eng/               | Yangjie   | {{flag>cn}} China | https://www.electronshik.ru/brand/YJ |
+| https://way-on.com/en_index.html             | WAYON     | {{flag>cn}} China | https://www.electronshik.ru/brand/WAYON |
+| http://www.goford.cn/products.php?CateId=3   | Goford    | {{flag>cn}} China | |
+| http://www.vbsemi.com/                       | VBSemi    |                   | |
-==== Manufacturers ====
-| https://www.panjit.com.tw/en | PANJIT | China |
-==== MOSFET driver ====
+===== MOSFET driver =====
 ^ link ^ ext ^ description ^ manufacturer ^ version ^ date ^ lang ^
-| [[http://docs.inmys.ru:8181/open&hash=0d1d6daf8529e59051f7b730583c9ad0|ADP3121-D.PDF]] | PDF | **ADP3121**\\ Onsemi\\ Dual Bootstrapped, 12 V MOSFET Driver with Output Disable  | Onsemi | rev.1 | 2010.02 | EN |
+| [[http://doc.inmys.ru/open?hash=0d1d6daf8529e59051f7b730583c9ad0|ADP3121-D.PDF]] | PDF | **ADP3121**\\ Onsemi\\ Dual Bootstrapped, 12 V MOSFET Driver with Output Disable  | Onsemi | rev.1 | 2010.02 | EN |
-| [[http://docs.inmys.ru:8181/open&hash=8ab793417f5de9a848913eac7433aa10|ADP3110A-D.PDF]] | PDF | **ADP3110A**\\ Onsemi\\ Dual Bootstrapped, 12 V MOSFET Driver with Output Disable  | Onsemi | rev.4 | 2008.08 | EN |
+| [[http://doc.inmys.ru/open?hash=8ab793417f5de9a848913eac7433aa10|ADP3110A-D.PDF]] | PDF | **ADP3110A**\\ Onsemi\\ Dual Bootstrapped, 12 V MOSFET Driver with Output Disable  | Onsemi | rev.4 | 2008.08 | EN |
-| [[http://docs.inmys.ru:8181/open&hash=118b9c92f47e45506c8de1ab5dfaf739|ADP3120A-D.PDF]] | PDF | **ADP3120A**\\ Onsemi\\ Dual Bootstrapped, 12 V MOSFET Driver with Output Disable  | Onsemi | rev.5 | 2018.08 | EN |
+| [[http://doc.inmys.ru/open?hash=118b9c92f47e45506c8de1ab5dfaf739|ADP3120A-D.PDF]] | PDF | **ADP3120A**\\ Onsemi\\ Dual Bootstrapped, 12 V MOSFET Driver with Output Disable  | Onsemi | rev.5 | 2018.08 | EN |
+===== MOSFET =====
+**Question:**\\
+Two conditions are described for the total dissipation parameter in the power ratings of a power transistor or a power MOS FET: **Ta** = 25°C and **Tc** = 25°C. What is the difference between these conditions?
+**Answer:**\\
+The specification at **Ta** = 25°C in the power ratings refers to the total power dissipation of a discrete semiconductor element in an environment with an ambient temperature of 25°C.
+In this case, the thermal resistance from the heat source to the ambient air is expressed as **Rth(j-a)**.
+The specification at **Tc** = 25°C in the power ratings refers to the total power dissipation when the semiconductor element (case) itself has been forcibly cooled, i.e., when temperature of the package surface is kept at 25°C.
+Note that the ratings may include the note "with infinite heat sink". However, in actual use, it is very difficult to make the package surface temperature exactly 25°C, and if you also take derating into account, the allowable power will in fact be somewhere in between **Ta** = 25°C and **Tc** = 25°C.
+**Ta** = Ambient temperature. This is a still air temperature reading for the environment that the semiconductor is in.
+**Tc** = Case temperature. This is the temperature reading of the case of the semiconductor device.
+>**Ta** would normally mean the environment is cooled and kept at 25°C whereas Tc would mean the device is forcibly cooled through a directly attached heatsink and cooled to the 25°C.
+**Tj** = Operating Junction temperature. This is the temperature of the device circuit itself under given conditions. **Tj** must be calculated from the **Tc** and/or **Ta**.
+**TJmax** = Maximum Junction temperature. This is the maximum temperature that the device tolerate.
 ==== MOSFET N-CHANNEL ====
 ^ link ^ ext ^ description ^ manufacturer ^ version ^ date ^ lang ^
-| [[http://docs.inmys.ru:8181/open&hash=b0dcdee4731fe9cebd18c0f98946e45c|Infineon_BSC034N03LS_G_DataSheet_v02_00_EN-1731101.pdf]] | pdf | **BSC034N03LSG ATMA1**\\ INFINEON\\ Транзистор: N-MOSFET; полевой; 30В; 100А; 57Вт; PG-TDSON-8 | Infineon | rev. 2.0 | 2021.06 | EN |
+| [[http://doc.inmys.ru/open?hash=b0dcdee4731fe9cebd18c0f98946e45c|Infineon_BSC034N03LS_G_DataSheet_v02_00_EN-1731101.pdf]] | pdf | **BSC034N03LSG ATMA1**\\ INFINEON\\ Транзистор: N-MOSFET; полевой; 30В; 100А; 57Вт; PG-TDSON-8 | Infineon | rev. 2.0 | 2021.06 | EN |
-| [[http://docs.inmys.ru:8181/open&hash=1eab888b3a2d77d344c2123a6d4e7d78|NTMFS4834N-D.PDF]] | PDF | **NTMFS4834N**\\ Onsemi\\ MOSFET – Power, Single, N-Channel, SO-8FL 30 V, 130 A\\ Применяется с ADP3121 на плате Intel DX58S0 | Onsemi | rev. 6 | 2019.05 | EN |
+| [[http://doc.inmys.ru/open?hash=1eab888b3a2d77d344c2123a6d4e7d78|NTMFS4834N-D.PDF]] | PDF | **NTMFS4834N**\\ Onsemi\\ MOSFET – Power, Single, N-Channel, SO-8FL 30 V, 130 A\\ Применяется с ADP3121 на плате Intel DX58S0 | Onsemi | rev. 6 | 2019.05 | EN |
+=== Для 1.8В ===
+BSS138, FDV301N, WM02N20G (большая ёмкость), WM02N08G (получше, но большая ёмкость)
+FDV301N лучше BSS138
+FDV303N хороший, ёмкость больше, чем FDV301N
+===== Darlington =====
+[[https://ru.wikipedia.org/wiki/составной транзистор]]
+{{ :wiki:cmp:transistors:darlington-pair-npn-pnp.jpg?480&direct }}

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