LPDDR4 (LPDDR4x)

Manufacturers

https://semiconductor.samsung.com/dram/lpddr/lpddr4x/	Samsung	BGA200 up to 32Gb and more
https://product.skhynix.com/products/dram/lpddr/lpddr4x_4.go	SKHynix	BGA200 up to 32Gb and more
https://www.micron.com/products/dram/lpdram/part-catalog	Micron	BGA200 up to 24Gb (купил Elpida)
https://www.nanya.com/en/Product/List/547/2356	Nanya	BGA200 up to 32Gb
Quimonda	Обанкротилась
https://www.issi.com/US/product-dram-lpddr4.shtml	ISSI	BGA200 up to 8Gb
https://www.alliancememory.com/products/lpddr4-mobile-ddr4/	Alliancememory	BGA200 up to 8Gb
https://www.intelligentmemory.com/dram-components/LPDDR4/	Intelligentmemory	BGA200 up to 8Gb
https://www.winbond.com/hq/product/mobile-dram/low-power-ddr4-ddr4x-sdram/?__locale=en	Winbond	BGA200 up to 4Gb
https://www.apmemory.com/products/low-power-dram/	Apmemory	512Mb(x16) under development (Дочка Powerchip)
https://www.cxmt.com/en/products/lpddr4x-dram/	ChangXin Memory Technologies	No info

SKHynix

H9HCNNNFAMMLXR-NEE	PC	LPDDR4X	8GB	1.8V / 1.1V / 0.6V	4266Mbps	200Ball	MP
H9HCNNNFAMALTR-NME	PC	LPDDR4X	8GB	1.8V / 1.1V / 0.6V	3733Mbps	200Ball	MP
H9HCNNNCPMMLXR-NEE	PC	LPDDR4X	4GB	1.8V / 1.1V / 0.6V	4266Mbps	200Ball	MP
H9HCNNNCPMALHR-NEE	PC	LPDDR4X	4GB	1.8V / 1.1V / 0.6V	4266Mbps	200Ball	MP
H9HCNNNBKMALHR-NEE	PC	LPDDR4X	2GB	1.8V / 1.1V / 0.6V	4266Mbps	200Ball	MP
H9HCNNNBKMMLXR-NEE	PC	LPDDR4X	2GB	1.8V / 1.1V / 0.6V	4266Mbps	200Ball	MP
H9HCNNNCPUMLXR-NEE	PC	LPDDR4	4GB	1.8V / 1.1V / 1.1V	4266Mbps	200Ball	MP
H9HCNNNBKUMLXR-NEE	PC	LPDDR4	2GB	1.8V / 1.1V / 1.1V	4266Mbps	200Ball	MP
H9HCNNNBPUMLHR-NME	PC	LPDDR4	2GB	1.8V / 1.1V / 1.1V	3733Mbps	200Ball	MP
H9HCNNNBPUMLHR-NLE	PC	LPDDR4	2GB	1.8V / 1.1V / 1.1V	3200Mbps	200Ball	MP
H9HCNNN8KUMLHR-NME	PC	LPDDR4	1GB	1.8V / 1.1V / 1.1V	3733Mbps	200Ball	MP
H9HCNNN8KUMLHR-NLE	PC	LPDDR4	1GB	1.8V / 1.1V / 1.1V	3200Mbps	200Ball	MP
H54G66BYYJX104	Consumer	LPDDR4X	8GB	1.8V / 1.1V / 0.6V	4266Mbps	200Ball	MP
H9HCNNNFAMMLXR-NEI	Consumer	LPDDR4X	8GB	1.8V / 1.1V / 0.6V	4266Mbps	200Ball	MP
H9HCNNNFAMMLXR-NEE	Consumer	LPDDR4X	8GB	1.8V / 1.1V / 0.6V	4266Mbps	200Ball	MP
H9HCNNNCPMMLXR-NEE	Consumer	LPDDR4X	4GB	1.8V / 1.1V / 0.6V	4266Mbps	200Ball	MP
H54G56BYYJX089	Consumer	LPDDR4X	4GB	1.8V / 1.1V / 0.6V	4266Mbps	200Ball	MP
H9HCNNNCPMMLXR-NEI	Consumer	LPDDR4X	4GB	1.8V / 1.1V / 0.6V	4266Mbps	200Ball	MP
H9HCNNNCPMMLHR-NMI	Consumer	LPDDR4X	4GB	1.8V / 1.1V / 0.6V	3733Mbps	200Ball	MP
H9HCNNNCPMMLHR-NME	Consumer	LPDDR4X	4GB	1.8V / 1.1V / 0.6V	3733Mbps	200Ball	MP
H54G46BYYJX085	Consumer	LPDDR4X	2GB	1.8V / 1.1V / 0.6V	4266Mbps	200Ball	MP
H9HCNNNBKMMLXR-NEI	Consumer	LPDDR4X	2GB	1.8V / 1.1V / 0.6V	4266Mbps	200Ball	MP
H9HCNNNBKMMLXR-NEE	Consumer	LPDDR4X	2GB	1.8V / 1.1V / 0.6V	4266Mbps	200Ball	MP
H9HCNNNBKMMLHR-NME	Consumer	LPDDR4X	2GB	1.8V / 1.1V / 0.6V	3733Mbps	200Ball	MP
H9HCNNNBKMMLHR-NMI	Consumer	LPDDR4X	2GB	1.8V / 1.1V / 0.6V	3733Mbps	200Ball	MP
H9HCNNN4KMMLHR-NME	Consumer	LPDDR4X	0.5GB	1.8V / 1.1V / 0.6V	3733Mbps	200Ball	MP
H9HCNNNCPUMLXR-NEE	Consumer	LPDDR4	4GB	1.8V / 1.1V / 1.1V	4266Mbps	200Ball	MP
H9HCNNNCPUMLXR-NEI	Consumer	LPDDR4	4GB	1.8V / 1.1V / 1.1V	4266Mbps	200Ball	MP
H9HCNNNCPUMLHR-NME	Consumer	LPDDR4	4GB	1.8V / 1.1V / 1.1V	3733Mbps	200Ball	MP
H9HCNNNBKUMLXR-NEI	Consumer	LPDDR4	2GB	1.8V / 1.1V / 1.1V	4266Mbps	200Ball	MP
H9HCNNNBKUMLXR-NEE	Consumer	LPDDR4	2GB	1.8V / 1.1V / 1.1V	4266Mbps	200Ball	MP
H9HCNNNBKUMLHR-NME	Consumer	LPDDR4	2GB	1.8V / 1.1V / 1.1V	3733Mbps	200Ball	MP
H9HCNNNBKUMLHR-NMI	Consumer	LPDDR4	2GB	1.8V / 1.1V / 1.1V	3733Mbps	200Ball	MP
H9HCNNNBPUMLHR-NME	Consumer	LPDDR4	2GB	1.8V / 1.1V / 1.1V	3733Mbps	200Ball	MP
H9HCNNNBPUMLHR-NMI	Consumer	LPDDR4	2GB	1.8V / 1.1V / 1.1V	3733Mbps	200Ball	MP
H9HCNNNBPUMLHR-NLE	Consumer	LPDDR4	2GB	1.8V / 1.1V / 1.1V	3200Mbps	200Ball	MP
H54G36AYRBX257	Consumer	LPDDR4	1GB	1.8V / 1.1V / 0.6V	4266Mbps	200Ball	CS
H54G36AYRJX246	Consumer	LPDDR4	1GB	1.8V / 1.1V / 0.6V	4266Mbps	200Ball	CS
H54G38AYRBX259	Consumer	LPDDR4	1GB	1.8V / 1.1V / 0.6V	4266Mbps	200Ball	CS
H9HCNNN8KUMLHR-NME	Consumer	LPDDR4	1GB	1.8V / 1.1V / 1.1V	3733Mbps	200Ball	MP
H9HCNNN8KUMLHR-NMI	Consumer	LPDDR4	1GB	1.8V / 1.1V / 1.1V	3733Mbps	200Ball	MP
H54G26AYRBX256	Consumer	LPDDR4	0.5GB	1.8V / 1.1V / 0.6V	4266Mbps	200Ball	CS
H9HCNNN4KUMLHR-NMI	Consumer	LPDDR4	0.5GB	1.8V / 1.1V / 1.1V	3733Mbps	200Ball	MP
H9HCNNN4KUMLHR-NME	Consumer	LPDDR4	0.5GB	1.8V / 1.1V / 1.1V	3733Mbps	200Ball	MP
H54G66BYYVX104	Automotive	LPDDR4X	8GB	1.8V / 1.1V / 0.6V	4266Mbps	200Ball	MP
H54G66BYYPX104	Automotive	LPDDR4X	8GB	1.8V / 1.1V / 0.6V	4266Mbps	200Ball	MP
H54G66BYYQX104	Automotive	LPDDR4X	8GB	1.8V / 1.1V / 0.6V	4266Mbps	200Ball	MP
H54G56BYYPX089	Automotive	LPDDR4X	4GB	1.8V / 1.1V / 0.6V	4266Mbps	200Ball	MP
H54G56BYYVX089	Automotive	LPDDR4X	4GB	1.8V / 1.1V / 0.6V	4266Mbps	200Ball	MP
H9HCNNNCPMMLHR-NMO	Automotive	LPDDR4X	4GB	1.8V / 1.1V / 0.6V	3733Mbps	200Ball	MP
H9HCNNNCPMMLHR-NMN	Automotive	LPDDR4X	4GB	1.8V / 1.1V / 0.6V	3733Mbps	200Ball	MP
H54G46BYYQX085	Automotive	LPDDR4X	2GB	1.8V / 1.1V / 0.6V	4266Mbps	200Ball	MP
H54G46BYYVX085	Automotive	LPDDR4X	2GB	1.8V / 1.1V / 0.6V	4266Mbps	200Ball	MP
H54G46BYYPX085	Automotive	LPDDR4X	2GB	1.8V / 1.1V / 0.6V	4266Mbps	200Ball	MP
H9HCNNNBKMMLHR-NMO	Automotive	LPDDR4X	2GB	1.8V / 1.1V / 0.6V	3733Mbps	200Ball	MP
H9HCNNNBKMMLHR-NMN	Automotive	LPDDR4X	2GB	1.8V / 1.1V / 0.6V	3733Mbps	200Ball	MP
H54G38AYRPX264	Automotive	LPDDR4X	1GB	1.8V / 1.1V / 0.6V	4266Mbps	200Ball	MP
H54G36AYRPX246	Automotive	LPDDR4X	1GB	1.8V / 1.1V / 0.6V	4266Mbps	200Ball	MP
H54G36AYRQX246	Automotive	LPDDR4X	1GB	1.8V / 1.1V / 0.6V	4266Mbps	200Ball	MP
H54G38AYRVX264	Automotive	LPDDR4X	1GB	1.8V / 1.1V / 0.6V	4266Mbps	200Ball	MP
H54G36AYRVX246	Automotive	LPDDR4X	1GB	1.8V / 1.1V / 0.6V	4266Mbps	200Ball	MP
H54G38AYRQX264	Automotive	LPDDR4X	1GB	1.8V / 1.1V / 0.6V	4266Mbps	200Ball	MP
H54G26AYRPX066	Automotive	LPDDR4X	0.5GB	1.8V / 1.1V / 0.6V	4266Mbps	200Ball	MP
H54G26AYRVX066	Automotive	LPDDR4X	0.5GB	1.8V / 1.1V / 0.6V	4266Mbps	200Ball	MP
H54G26AYRQX066	Automotive	LPDDR4X	0.5GB	1.8V / 1.1V / 0.6V	4266Mbps	200Ball	MP
H9HCNNN4KMMLHR-NMP	Automotive	LPDDR4X	0.5GB	1.8V / 1.1V / 0.6V	3733Mbps	200Ball	MP
H9HCNNN4KMMLHR-NMO	Automotive	LPDDR4X	0.5GB	1.8V / 1.1V / 0.6V	3733Mbps	200Ball	MP
H9HCNNN4KMMLHR-NMN	Automotive	LPDDR4X	0.5GB	1.8V / 1.1V / 0.6V	3733Mbps	200Ball	MP
H54G56BYYQX046	Automotive	LPDDR4	4GB	1.8V / 1.1V / 1.1V	4266Mbps	200Ball	MP
H54G56BYYVX046	Automotive	LPDDR4	4GB	1.8V / 1.1V / 1.1V	4266Mbps	200Ball	MP
H54G56BYYPX046	Automotive	LPDDR4	4GB	1.8V / 1.1V / 1.1V	4266Mbps	200Ball	MP
H9HCNNNCPUMLHR-NMN	Automotive	LPDDR4	4GB	1.8V / 1.1V / 1.1V	3733Mbps	200Ball	MP
H9HCNNNCPUMLHR-NMO	Automotive	LPDDR4	4GB	1.8V / 1.1V / 1.1V	3733Mbps	200Ball	MP
H54G46BYYVX053	Automotive	LPDDR4	2GB	1.8V / 1.1V / 1.1V	4266Mbps	200Ball	MP
H54G46BYYPX053	Automotive	LPDDR4	2GB	1.8V / 1.1V / 1.1V	4266Mbps	200Ball	MP
H54G46BYYQX053	Automotive	LPDDR4	2GB	1.8V / 1.1V / 1.1V	4266Mbps	200Ball	MP
H9HCNNNBPUMLHR-NMO	Automotive	LPDDR4	2GB	1.8V / 1.1V / 1.1V	3733Mbps	200Ball	MP
H9HCNNNBPUMLHR-NMN	Automotive	LPDDR4	2GB	1.8V / 1.1V / 1.1V	3733Mbps	200Ball	MP
H9HCNNNBKUMLHR-NMO	Automotive	LPDDR4	2GB	1.8V / 1.1V / 1.1V	3733Mbps	200Ball	MP
H9HCNNNBKUMLHR-NMN	Automotive	LPDDR4	2GB	1.8V / 1.1V / 1.1V	3733Mbps	200Ball	MP
H9HCNNN8KUMLHR-NMN	Automotive	LPDDR4	1GB	1.8V / 1.1V / 1.1V	3733Mbps	200Ball	MP
H9HCNNN8KUMLHR-NMO	Automotive	LPDDR4	1GB	1.8V / 1.1V / 1.1V	3733Mbps	200Ball	MP
H9HCNNN4KUMLHR-NMO	Automotive	LPDDR4	0.5GB	1.8V / 1.1V / 1.1V	3733Mbps	200Ball	MP
H9HCNNN4KUMLHR-NMP	Automotive	LPDDR4	0.5GB	1.8V / 1.1V / 1.1V	3733Mbps	200Ball	MP
H9HCNNN4KUMLHR-NMN	Automotive	LPDDR4	0.5GB	1.8V / 1.1V / 1.1V	3733Mbps	200Ball	MP

low power

LPDDR4X is a variant of LPDDR4, with the difference of additional power savings by reducing the I/O voltage from 1.1 V to 0.6 V.

ECC

ECC is supported on the LPDDR4 interface. Unlike traditional ECC interfaces which require dedicated memory pins and devices, ECC is supported inline. The ECC system impact is in interface bandwidth and overall memory density, as ECC data is stored alongside non-ECC data.

sideband - это когда отдельный чип под ECC (для LPDDR - не бывает)

inline - когда из разных мест читает контроллер

on-die - когда всё в пямяти и дополнительно для ECC место выделено

есть p\n с ECC (https://www.issi.com/WW/pdf/43-46LQ16256-32128EA-AL.pdf), есть - без ECC (https://www.issi.com/WW/pdf/43-46LQ32256A-AL.pdf)

Termination

LPDDR4 memories have software configurable on-die termination for both the data group nets. The DDR subsystem also contains software configurable on-die termination for the address/control group nets. Thus, termination is not required on any DDR signals for an LPDDR4 configuration.

VREF

LPDDR4 memories generate their own VREFCA and VREFDQ internally for the address / command bus and data bus, respectively. Similarly, the DDR PHY also provides its own reference voltage for the data group nets during reads. Thus unlike DDR3 and DDR4, VREF does not need to be generated on the board, and there is no required VREF routing for an LPDDR4 configuration.

VTT

Unlike DDR3 and DDR4, there is no required termination on the PCB of the address/control bus of an LPDDR4 configuration. All termination is handled internally (on-die). Thus, VTT does not apply for LPDDR4.

Routing

TI	RockChip ref design
SE impedance	40 Ohm	4mil\0.035u\0.082 prepreg Dk4.5 - ??? Ohm
DIFF impedance	80 Ohm	3.8mil\6mil\0.035u\0.082 prepreg Dk4.5 - ??? Ohm

Balanced T traces (also referred to as T-branch traces) are split traces from source to multiple end points. The target impedance of the split trace should be 2 times the non-branched impedance.

The length/delay matching process should include a mechanism for compensating for the velocity delta between these two types of PCB interconnects. A compensation factor of 1.1 has been specified for this purpose by JEDEC. All microstrip segment lengths are to be divided by 1.1 before summation into the length matching equation. The resulting compensated length is termed the 'stripline equivalent length'.

CK and ADDR_CTRL	TI
CK+ to CK- skew	0.25 ps TYP
inside ADDR_CTRL skew	3 ps TYP
CK to ADDR_CTRL skew	3 ps TYP
CK\ADDR_CTRL propagation delay	250 ps MAX
DATA	TI
DQS+ to DQS- skew	0.1 ps TYP
inside DQSx + BYTEx skew	0.5 ps TYP
BYTEx\DQSx propagation delay	250 ps MAX
Propagation delay of each DQS pair must be less than propagation delay DQ/DM
Propagation delay of each DQS pair must be less than propagation delay of CK pair.

Docs

Application Notes
link	ext	description	manufacturer	version	date	lang
8MN HDG LPDDR4 related excerpts.pdf	pdf	i.MX 8M Nano LPDDR4-3200 design recommendations NXP	NXP	EN
spracn9b.pdf	pdf	SPRACN9B Application Report Jacinto 7 LPDDR4 Board Design and Layout Guidelines	Texas Instruments	Rev. B	2021	EN
spraar7h.pdf	pdf	Application Report SPRAAR7H–August 2014–Revised Ocrtober 2018 High-Speed Interface Layout Guidelines	Texas Instruments	Rev. H	2018	EN
Datasheets
link	ext	description	manufacturer	version	date	lang
200b_z11m_non_auto_lpddr4_lpddr4x.pdf	pdf	MT53D512M16D1, MT53D512M32D2, MT53D1024M32D4 200b: x16/x32 LPDDR4/LPDDR4X SDRAM 1GB, 2GB, 4GB	Micron	Rev. D 3/20	2017	EN