Содержание

Transistors

Manufacturers

MOSFET driver

link ext description manufacturer version date lang
ADP3121-D.PDF PDF ADP3121
Onsemi
Dual Bootstrapped, 12 V MOSFET Driver with Output Disable
Onsemi rev.1 2010.02 EN
ADP3110A-D.PDF PDF ADP3110A
Onsemi
Dual Bootstrapped, 12 V MOSFET Driver with Output Disable
Onsemi rev.4 2008.08 EN
ADP3120A-D.PDF PDF ADP3120A
Onsemi
Dual Bootstrapped, 12 V MOSFET Driver with Output Disable
Onsemi rev.5 2018.08 EN

MOSFET

Question:
Two conditions are described for the total dissipation parameter in the power ratings of a power transistor or a power MOS FET: Ta = 25°C and Tc = 25°C. What is the difference between these conditions?

Answer:
The specification at Ta = 25°C in the power ratings refers to the total power dissipation of a discrete semiconductor element in an environment with an ambient temperature of 25°C. In this case, the thermal resistance from the heat source to the ambient air is expressed as Rth(j-a).

The specification at Tc = 25°C in the power ratings refers to the total power dissipation when the semiconductor element (case) itself has been forcibly cooled, i.e., when temperature of the package surface is kept at 25°C. Note that the ratings may include the note «with infinite heat sink». However, in actual use, it is very difficult to make the package surface temperature exactly 25°C, and if you also take derating into account, the allowable power will in fact be somewhere in between Ta = 25°C and Tc = 25°C.

Ta = Ambient temperature. This is a still air temperature reading for the environment that the semiconductor is in.

Tc = Case temperature. This is the temperature reading of the case of the semiconductor device.

Ta would normally mean the environment is cooled and kept at 25°C whereas Tc would mean the device is forcibly cooled through a directly attached heatsink and cooled to the 25°C.

Tj = Operating Junction temperature. This is the temperature of the device circuit itself under given conditions. Tj must be calculated from the Tc and/or Ta.

TJmax = Maximum Junction temperature. This is the maximum temperature that the device tolerate.

MOSFET N-CHANNEL

link ext description manufacturer version date lang
Infineon_BSC034N03LS_G_DataSheet_v02_00_EN-1731101.pdf pdf BSC034N03LSG ATMA1
INFINEON
Транзистор: N-MOSFET; полевой; 30В; 100А; 57Вт; PG-TDSON-8
Infineon rev. 2.0 2021.06 EN
NTMFS4834N-D.PDF PDF NTMFS4834N
Onsemi
MOSFET – Power, Single, N-Channel, SO-8FL 30 V, 130 A
Применяется с ADP3121 на плате Intel DX58S0
Onsemi rev. 6 2019.05 EN

Для 1.8В

BSS138, FDV301N, WM02N20G (большая ёмкость), WM02N08G (получше, но большая ёмкость)

FDV301N лучше BSS138

FDV303N хороший, ёмкость больше, чем FDV301N

Darlington

https://ru.wikipedia.org/wiki/составной транзистор

darlington-pair-npn-pnp.jpg